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Accelerated temperature lifetesting at Tchannel of 240, 255, and 270°C was performed on 0.1-μm Pt-sunken InP HEMT low-noise amplifiers fabricated on 100 mm InP substrates. The reliability performance was evaluated based on ΔS21 <; -1 dB at 35 GHz. The lifetesting results exhibit activation energy of approximately 1.8 eV and lifetime projection of 99% reliability and 90% confidence exceeds 1 × 10...
Reliability performance of 0.1-μm Pt-sunken gate InP HEMT MMICs on 4-inch InP substrates was evaluated under elevated temperature life testing. The primary degradation mechanism was observed to be the progressive Schottky junction reaction with the Schottky barrier InAlAs and the InGaAs channel. Despite the progressive Schottky junction reaction with the InAlAs and InGaAs materials, the lifetest at...
The blockage of the hole transport due to the excess hole in SiGe quantum dots was observed in the metal-oxide-semiconductor (MOS) tunneling diodes for the first time. The hole tunneling current from Pt gate electrode to p-type Si dominates the inversion current at the positive gate bias and is seven order of magnitude higher than the Al gate/oxide/p-Si device. The SiGe quantum dots confine the excess...
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