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The natural choice to achieve multiple threshold voltages (Vth) in fully-depleted devices is by choosing the appropriate gate workfunction for each device. However, this comes at the cost of significantly higher process complexity. The absence of a body contact in FinFETs and insensitivity to back-gate bias leaves the conventional channel doping approach as the most practical technique to achieve...
Well-defined ZnO and ZnO: La nanorods have been successfully fabricated by a low temperature hyderthermal process. The XRD patterns of both compositions with single diffraction peak (002) show the same wurtzite hexagonal structure. The radius of ZnO: La nanorods observed by FE-SEM is smaller than that of pure ZnO indicating the inhibition of growth rate by the doping of La. Photoluminescence spectra...
FinFET devices achieving N/P Ion values of 1250/950 uA/um at 100nA/um at 1V, 1300/1000 uA/um with self-heating correction, are demonstrated, using a dual work function gate-first process flow at 100 nm gate pitch and 40 nm fin pitch. Ring-oscillator (RO, FO=3) functionality has been demonstrated, showing excellent Vdd scalability. We have also demonstrated logic scan chain functionality and yield...
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