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When the size down to nanometer scale, different layout pattern effect to enhance device performance with advanced strain engineering. Protruded portion outside the channel region located on the soft STI A long gate width direction and across the dummy active region is preferable in the manufacture of transistors. For this reason, a 22 nm pMOSFET of silicon-based with S/D stressors Si75Ge25 alloy...
In this study, the stress components of device with Ge-Based and Ge1−xSix S/D stressors for NMOSFETs have been simulated by TCAD. On the other hand, the mobility was derived according with the relationship between channel stresses and Piezoresistive theory. The relation between gate width, STI length, and dummy OD length will be discussed. The simulation shows the devices with narrow gate width, longer...
To investigate the combined strained effects of dummy active diffused region (OD) and salient gate width of layout pattern on the mobility gain of nano-scaled device while advanced stressors of source/drain embedded silicon-carbon alloy and a tensile contact etch stop layers (CESL) are taken into account, the study uses a validated fabricated-oriented stress simulated methodology to estimate the performance...
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