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When the size down to nanometer scale, different layout pattern effect to enhance device performance with advanced strain engineering. Protruded portion outside the channel region located on the soft STI A long gate width direction and across the dummy active region is preferable in the manufacture of transistors. For this reason, a 22 nm pMOSFET of silicon-based with S/D stressors Si75Ge25 alloy...
The layout patterns of nano-scale devices have significant impacts on device performance when an increase in operating velocity is considered. Thus, advanced strain engineering of metal-oxide-semiconductor field-effect transistors (MOSFETs) is necessary when highly scaled gate lengths are employed. The foregoing mechanical effects are observable when a device with a narrow channel width is utilized...
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