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Different low-voltage and low-power techniques, which meets modern integrated circuit design requirements, appears as the key towards achievement of enhanced performance of designed circuits. For deep sub-micron technologies, choosing a suitable transistor model becomes very important. Conventional MOS transistor models, such as BSIM or PSP, are developed for conventional gate-driven applications...
In this paper, different topologies of gate-driven and bulk-driven current mirrors designed in 90 nm CMOS technology are presented. Since the conventional MOS transistors can work as a bulk-driven device, there is no need for any modification of the existing MOSFET structure or technology process. The bulk-driven current mirror is capable of operating at power supplies down to the threshold voltage...
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