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The luminescence properties from shallowly Ge-implanted SiO2 layer were investigated for the purpose of fabrication of optical light source in blue-UV range at very low voltage operation. Germanium negative ions were implanted into 50-nm SiO2 layer on Si at very shallow depth from the surface to several tens nm at 10–50 keV and different incident angles. After post annealing, we measured photoluminescence...
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