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We present aluminum oxide (AI2O3) as high-k Inter-Poly Dielectric (IPD) in a proven 0.13 mum based embedded Flash (eFlash) technology. Full functionality has been demonstrated from a 400Kbyte product demonstrator for the first time published so far. The AI2O3 layer was formed through Atomic-Layer Deposition (ALD) and the influence of parameters such as precursor, deposition temperature, feed-time...
We report Flash cell write/erase and reliability data from a 2Mb demonstrator processed using a 0.13 mum based eFlash technology comprising the high-k material, aluminum oxide (Al2O3) within the inter-poly dielectric (IPD) layer. With bottom and top-oxides (SiO2) completing the OAO IPD stack, producing an EOT of 9.5 nm, a 2.0 V improvement in programming voltage over a Flash cell with a conventional...
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