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By varying the arrangements of patterned sapphire substrates, the stress-induced bandgap widening of GaN-based epitaxial layers can be acquired. Photoluminescence and Raman results demonstrate a linear relationship of blue-shift with the increase of residual stress.
The growth of InGaN-based light-emitting diodes (LEDs) on dry-etched patterned sapphire substrates (DPSSs) with nano-sized periods can relax the residual compressive strain in InGaN/GaN multiple-quantum wells (MQWs), given that the stronger the light emitted.
We implemented the flower-like light trapping structures on the surface of HIT solar cell to achieve a great reflectance reduction and effectively improve the JSC from 34.32 mA/cm2 to 39.4 mA/cm2 compared to the reference.
In this work, we propose two Fourier series expansion methods (FSEM), one improved from the original FSEM and another a simplified version of the improved FSEM, to significantly enhance the accuracy of solution along with consuming less computation time and to eliminate the Gibbs phenomenon when dealing with electrocardiography (ECG).
By incorporating two-dimensional photonic crystals into the surface of InGaN-based LEDs, the strong correlation between the air duty cycle and the light extraction efficiency of LEDs was demonstrated by optical and electrical measurement results.
We experimentally report that the novel “chess board” like 1-D grating structure with optimal period of 800 nm can dramatically increases the JSC from 33.7 mA/cm2 to 38.9 mA/cm2 compared to the reference solar cell.
In this paper, we have fabricated two-dimensional (2-D) photonic crystals (PhCs) in order to obtain the high light extraction efficiency of InGaN-based Light Emitting Diodes (LEDs) and then we used front-side illuminated micro-photoluminescence (μ-PL) spectroscopy to measure the PL intensity of our InGaN-based LEDs, we also used back-side illuminated inverted microscopy to double check our PL intensity...
This paper demonstrates that the efficiency of InGaN-based light-emitting diodes with nano-post patterned sapphire substrates is superior to that with nano-hole patterned sapphire substrates under the same nano-scale feature owing to reduced quantum-confined stark effect.
We fabricate four different size grating structure on the top of the quantum well infrared photodetectors, then etch them into four different etching depth. With suitable design, the peak responsivity of the QWIPs is about thirteen times larger than that of the conventional QWIP.
This paper demonstrates that the quantum-confined stark effect of InGaN-based light-emitting diodes can be enhanced by the means of using the hexagonal nano-post patterned sapphire substrates based on the increase of the post-duty cycle.
We utilized rapid prototyping technology to fabricate the resin substrate with a PMMA cover slide as close-ended chip to avoid evaporation. And we applied AC voltages in ionic solution to improve the S/N ratio. By measuring ionic phase during frequency shift, we acquired data in a complex form, that is, real and imaginary part of currents. The measuring system implemented in lock-in amplifier which...
In this work, we first fabricated the conventional metal-semiconductor-metal (MSM) interdigitated electron detector with aluminum contact as the control group, then used e-beam lithography system and reactive ion etcher (RIE) to fabricate nano-hole array structure on the contact area and used RIE to fabricate the periodic rectangle trench in the active area of the electron detector as another MSM...
This work presented multi-color infrared photodetector for operation at high temperature and low bias. The BLIP temperature is about 100K and the photoresponse is 12mA/Wat 110K under 0.3V. This device is the promising candidate of a pixel in the focal plane array.
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