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The Double-Gate MOSFET can be used to design the nanotechnology based switches at the range of Terahertz for transceiver processes. In this research, the switching frequency with the help of transconductance for Terahertz Double-Gate MOSFET has been analyzed. The switching transient has been observed with inclusion of currents. It will be suitable for the application of nanotechnology regime.
Established RF CMOS switch contains MOSFET in its main architecture with a 5.0 V of control voltage and required high value of resistance in circuitry of transceivers to detect the signal. To avoid the high value of control voltage and those resistances, we proposed a Double-Pole Four-Throw switch using RF CMOS technology and verified its performance interns of currents and switching speed. Also to...
In this paper, we have designed a Double-Pole Four-Throw (DP4T) RF CMOS switch, using Double-Gate (DG) MOSFET which has a high dielectric Hafnium-dioxide (HfO2) in place of Silicon-dioxide (SiO2). The performance of HfO2 for the switch such as an effective ON-resistance, attenuation, flat-band capacitance, average dynamic power, doping densities, Debye length, and mobility of carriers, barrier heights...
Elimination of the p-MOS transistor from the pass gate network significantly reduces the parasitic capacitances associated with each node in the circuit, thus, the operation speed is typically higher as compared to the CMOS counterpart. But then the improvement in the transient characteristics comes at the price of increased process complexity. In Complementary pass transistor logic (CPL) circuit,...
Circuit with double gates using independently controlled gates have been proposed to reduce the number of gates and to increase the logic densities per area. This paper introduces a vertical slit FET (double gate transistor) which has been demonstrated with the help of figures with unique independent double gate properties to demonstrate the possible advantages for independent double gate circuits...
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