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This paper presents a theoretical framework about interface states creation rate from Si–H bonds at the Si/SiO 2 interface. It includes three mains ways of bond breaking. In the first case, the bond can be broken thanks to the bond ground state rising with an electrical field. In the two others cases, incident carriers will play the main role either if there are very energetic or very numerous...
This paper discusses the characterization and modeling methodology for NBTI for subsequent use in reliability simulations. Given the integral recovery post NBTI stress, we use on-the-fly technique to measure degradation. A new and fully experimental means of interpretation of results from OTF is presented. We also present some new evidence of hole-trapping/detrapping during NBTI degradation
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