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In the InP/InGaAs metamorphic co-integrated heterostructure bipolar and field-effect transistors (BiFETs), the field-effect transistor (FET) with pseudomorphic channel layer was stacked on the top of the metamorphic heterostructure bipolar transistor (HBT) with pseudomorphic base–emitter spacer layers. In the FET, a relatively thin as well as heavily doped In0.65Ga0.35As pseudomorphic channel layer...
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