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Heat resistance of Ga-doped ZnO (GZO) films have been studied for films deposited by an ion-plating with DC-arc discharge. Influences of O2 flow rate during the deposition and atmosphere on heat resistance was examined. Electrical properties of the GZO films changed depending on the O2 flow rate during deposition. The minimum resistivity was obtained at the O2 flow rate of 11 sccm. The heat resistance...
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