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Medium-voltage (MV) SiC devices have been developed recently which can be used for three-phase MV grid tie applications. Two such devices, 15 kV SiC insulated-gate bipolar transistor (IGBT) and 10 kV SiC MOSFET, have opened up the possibilities of looking into different converter topologies for the MV distribution grid interface. These can be used in MV drives, active filter applications, or as the...
Recently, medium voltage SiC devices have been developed which can be used for grid tie applications at medium voltage. Two such devices − 15 kV SiC IGBT and 10 kV SiC MOSFET have opened up the possibility of looking into different converter topologies for medium voltage distribution grid interface. These can be used in medium voltage drives, active filter applications or as the active front end converter...
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