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With the change in scenario of continuous thrust for the improvement of efficiency of the overall system, motors are being coupled with variable frequency drives (VFD) to achieve energy savings, reduced wear and tear on motors, reduction of maintenance cost of mechanical flow controls etc. To meet the market requirements in the low voltage segment, 1MW, 690V ac drive has been developed. The system...
The commercial availability of silicon carbide (SiC) MOSFET has been a significant boost for power electronics industry. It is due to its unique improved switching capabilities compared to state of the art silicon (Si) IGBT. However, the faster switching response of SiC MOSFET gives rise to different technical issues in practical applications. This paper analyzes two of these issues. The first problem...
A 1200 V SiC MOSFET switches at much faster rate compared to a Si IGBT. As a consequence, SiC MOSFET experiences comparatively more ringing in device voltage and current due to the presence of parasitic inductance in the converter layout. Therefore, it is not straightforward to retrofit SiC MOSFETs in the converter layout of IGBTs where parasitic inductance appears in the range of 100 nH to 300 nH...
The ability of an electrical drive to continue operation without tripping in spite of short-duration voltage sags or power supply interruptions is known as power failure ride-through capability. Critical production processes in industries require the drives to smoothly ride-through during momentary power interruptions. The reliability of the drive is dependent on the maximum duration for which a total...
Critical production processes in industry require the drives to smoothly ride-through during momentary power interruptions. This paper presents a method to extend the duration of the ride-through for VSI-fed vector controlled induction motor drives with a front end diode bridge rectifier. The proposed method minimises the losses in the system during the ride-through thereby enabling a longer ride-through...
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