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SiC MOSFET can switch five to ten times faster compared to state of the art Si IGBT. Due to that SiC MOSFET based power converter can be lighter in weight, highly efficient, compact in size compared to Si IGBT based power converters. But the parasitic inductance in the power circuit will not allow SiC MOSFET to switch to its full potential due to very high device voltage overshoot, sustained oscillation...
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