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A novel suspended GeSn microstructure is demonstrated by selective etching of GeSn thin film on Ge. XRD and μ-Raman measurements show that the compressive strain in the GeSn thin film is effectively relaxed, and furthermore, unexpected tensile strain was introduced in the suspended GeSn.
We present our recent researches on novel group IV nano- and micro-structures for potential light sources on Si, including the tensile strained Ge quantum dots (QDs), GeSn thin films and microstructures, and Ge(Sn) nanowires. Tensile-strained Ge QDs were grown by SS-MBE, and photoluminescence was achieved. The GeSn thin films were demonstrated with Sn concentration above the bandgap transition critical...
The microstructures, surfaces and types of fracture of welded joints of dissimilar steels T92/HR3C are studied after short-term tests at 500 – 650°C. A pioneer equation is obtained for describing the long-term strength of welded joints with the help of data of short-term tensile tests. The values of the long-term strength computed by the equation agree well with experimental data.
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