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The reflective spectrum and the incident angle effects of double-layers AR-coating and Sub-Wavelength AR-coating on the triple-junction GaAs Solar Cell are characterized by short-circuit current (Isc), open-circuit voltage (Voc), and conversion efficiency (η).
We demonstrate a novel concept for a MOS-structure Si photovoltaic device with an increasing in photocurrent of 12.93% based on a biasing source applied to the MOS transparent ITO-gate-electrode using an auxiliary biasing solar cell.
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