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The Si quantum dot (Si-QD) doped SiO waveguide based all-optical cross-gain data inverter is demonstrated. The data inversion response of the probe at 1550 nm depends on the dispersed carrier lifetime in Si-QD, which is strongly correlated with the intensity of pulsed pump at wavelength of 405 nm. The free-carrier absorption cross-section of Si-QD is determined as 3.1 × 10 cm by fitting...
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