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Traditional BSIM MOSFET model extraction considers I-V/C-V curve fitting to capture DC non-linearity and S-parameter fitting to capture high-frequency small-signal behavior. This leads to poor accuracy when modeling MOSFETs in large-signal RF circuits such as power amplifiers, which require to model high-frequency large-signal behavior of MOSFETs. In this paper, we proposed an automatic method for...
Carbon-based materials have emerged as next generation electronic materials for device applications. In this work, radio-frequency behavior of square graphene is studied and characterized up to 67GHz. After an elaborate de-embedding process in which four dummy structures and three steps are employed, a new two-port physical-based equivalent circuit model is proposed and verified. It is estimated that...
Process variations in passive components, e.g., inductors, transformers, baluns, and transmission lines, are increasingly degrading the performance and production yield in RF/mm-wave circuits with technology scaling. Traditional statistical analysis methods are not suitable for RF/mm-wave circuits as time-consuming EM simulation needs to be performed many times. In this paper, a statistical analysis...
With the continuous shrinking of feature size, various effects due to shallow-trench-isolation (STI) stress are becoming more and more significant. The resulting nonuniform distribution of stress affects the MOSFET characteristics and hence changes the circuit behavior. This paper proposes a complete flow to characterize the influence of STI stress on performance of RF/analog circuits based on layout...
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