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The feasibility of full split C–V method in ultra-thin body and BOX (UTBB) FDSOI devices is demonstrated, emphasizing the usefulness of gate-to-bulk capacitance. The split C–V measurements carried out on both gate-to-channel and gate-to-bulk mode are shown to be consistent with TCAD simulation. This enabled us to propose an improved parameter extraction methodology for the whole vertical FDSOI stack...
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