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The polycrystalline microstructure of the high-k dielectric of gate stacks in metal-oxide-semiconductor (MOS) devices can be a potential source of variability. In this paper, a conductive atomic force microscope (CAFM) and a Kelvin probe force microscope (KPFM) have been used to investigate how the thickness and the crystallization (after a thermal annealing) of the high-k layer affect the nanoscale...
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