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Equations of the electric field, surface charge, and silicon capacitance with respect to the surface potential of single through-silicon via (TSV) are derived by Poisson's equation. Four kinds of charges such as the electrons, holes, and ionized donor/acceptor charges in the p-type silicon substrate are brought into the equations. The numerical results of the surface charge show identical plots to...
In this work, a multi-layer hierarchical distributed power delivery architecture for TSV 3DIC is proposed. By decoupling global and local power networks, the proposed power delivery architecture can be flexibly configured for different power requests. The decoupled power architectures can also greatly reduce the required decoupling capacitor sizes for voltage stabilization. Meanwhile, a multi-threshold...
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