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A novel amorphous silicon temporary bonding and corresponding laser assisted de-bonding technology are investigated for the improvement of 3D integration. Excellent bonding results with real device wafer with α-IGZO thin-film transistor are shown at the bonding temperature of 210°C, as well as outstanding performances for bonding strength, thermal stability, reliability and chemical resistance...
Cu-to-Cu microbumps have many advantages, such as better electrical and thermal conductivities. The Cu-to-Cu microbumps may be a potential solution to the heat dissipation problem in 3D IC integration. In addition, for packaging of CMOS image sensors, the bonding temperature is preferred to below 200 °C. Therefore, low temperature and low pressure Cu-to-Cu direct is of great interests for packaging...
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