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In this paper, we have discussed the fundamental properties of the germanium oxides formed by thermal oxidation and plasma post-oxidation as interfacial layers for Ge MOSFETs. The germanium oxides form high-quality Ge MOS interface with interface trap density of around 1011 cm-2eV-1. High-mobility Ge n-MOSFETs and p-MOSFETs have successfully been demonstrated even with EOT of less than 0.8 nm, exhibiting...
HfO2/Al2O3/GeOx/Ge gate stacks were fabricated by applying the plasma post oxidation to HfO2/Al2O3/Ge structures. These Ge gate stack are shown to simultaneously realize both ultrathin EOT of ∼0.7 nm and low Dit of 1011 cm−2eV−1 order. The superior operation of (100) Ge pMOSFETs with these gate stacks has been demonstrated with record high hole mobility of 596 cm2/Vs under ∼0.8 nm EOT among the Ge...
A novel plasma post oxidation method has been proposed to form an Al2O3/GeOx/Ge gate stack by using oxygen plasma through a thin ALD Al2O3 layer. This Ge gate stack is shown to simultaneously realize both thin EOT of ∼1 nm and low Dit of <1011 cm−2eV−1. Ge pMOSFETs, fabricated by employing this method, have demonstrated superior device operation with high hole mobilities of 437, 526 and 345...
We have found that GeO2/Ge MOS structures fabricated by direct thermal oxidation yield significantly low interface trap density (Dit). Thus, Ge pMOSFETs using the GeO2/Ge MOS structures with the superior interface properties have been fabricated for achieving high hole mobility and investigated for examining the impact of the interface properties on the device performance. Al2O3 or SiO films were...
Ge photodetectors and Ge MOSFETs were integrated on Ge-on-Insulator substrate by using oxidation condensation technique. The responsivity of photodetectors up to 1575 nm and excellent switching of MOSFETs were demonstrated.
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