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The critical issues, technical challenges and viable technologies of tunneling MOSFETs (TFET) utilizing III-V/Ge materials are examined in this study. N-channel TFETs using InGaAs bulk and quantum well (QW) homo-junctions, GaAsSb/InGaAs type-II hetero-junctions and Ge/strained SOI type-II hetero-junction are fabricated with emphasis on the superior source p+/n junction formation and the electrical...
We have demonstrated high performance operation of planar-type tunnel field-effect transistors (TFETs) using Ge/ III–V materials. Tensile strain in Si channels combined with the Ge source can enhance the tunneling current because of the reduced effective bandgap. The fabricated Ge/sSOI (1.1 %) TFETs show high Ion/Ioff ratio over 107 and steep minimum subthreshold slope (SS) of 28 mV/dec. It is found...
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