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We have successfully demonstrated III-V-semiconductor-on-insulator (III-V-OI) MOSFETs with ALD-Al2O3 buried oxide (BOX) layers under front-gate operation, for the first time. The high electron mobilities of ~3000 and ~2000 cm2/Vs were achieved for i-InGaAs and p-InGaAs channels, respectively, formed on Al2O3/Si. Also, we have found that the InGaAs-OI channel bottom condition (the InGaAs-OI/BOX interface)...
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