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MoS2 Transistors
As reported in article number 2210735, Yonghuang Wu, Zeqin Xin, Kai Liu, and co‐workers build harsh‐environment‐resistant MoS2 transistors by engineering electrode–channel interfaces. The transistors are resistant to high temperature of 350 °C, 100% relative humidity, and oxidizing environments, paving the way toward nanoscale devices working in harsh environments, for example in...
Nanoscale electronic devices that can work in harsh environments are in high demand for wearable, automotive, and aerospace electronics. Clean and defect‐free interfaces are of vital importance for building nanoscale harsh‐environment‐resistant devices. However, current nanoscale devices are subject to failure in these environments, especially at defective electrode–channel interfaces. Here, harsh‐environment‐resistant...
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