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This paper describes a power amplifier module (PAM) for 0.9-GHz WCDMA handsets applications. The PAM, assembled in a 3 mm × 3 mm package, features bulk Si-CMOS and GaAs-HBT hybrid architecture for pursuing low cost while maintaining high efficiency and high- and low-power mode (HPM and LPM) function required for commercially available PAM products. The CMOS die accommodates a driver stage for the...
This paper describes circuit design and measurement results of our newly developed InGaP/GaAs-HBT MMIC power amplifier (PA) module which can operate with 2.4-V low reference and low supply voltages of its on-chip bias circuits. To achieve the low-reference voltage operation, the following two new circuit design techniques are incorporated into the power amplifier: 1) AC-coupled, divided power stage...
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