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Double Patterning Lithography (DPL) is currently being used as part of Resolution Enhancement Technique (RET) in 45nm and 32nm technologies. DPL involves partitioning a layout into two masks to reduce interference from neighboring patterns and improve resolution. Triple pattern lithography has also been suggested as a way to continue scaling with trailing lithography technology. However, due to complexity...
Printed image on silicon wafer differs from layout due to optical diffraction. Optical proximity correction (OPC) is a layout distortion technique to improve printed image. During manufacturing, parameters such as focus, dose and resist thickness may vary within tolerance margins. These factors contribute to additional distortion of expected printed shape, not addressed directly by OPC. To ensure...
Optical lithography is an indispensible step in the process flow of design for manufacturability (DFM). Optical lithography simulation is a compute intensive task and simulation performance, or lack thereof can be a determining factor in time to market. Thus, the efficiency of lithography simulation is of paramount importance. Coherent decomposition is a popular simulation technique for aerial imaging...
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