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Ge nanocrystals have been obtained from the dewetting process during thermal annealing of an amorphous Ge layer deposited by molecular beam epitaxy on a thin SiO 2 layer on Si(001). The Ge nanocrystals were then capped with a thin layer of amorphous Si. The mean nanocrystal size–2.5–60 nm–depends on the initial Ge layer thickness. Low-temperature photoluminescence (PL) measurements were performed...
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