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Strained-Si/SiGe/Si structures are of increasing importance for microelectronic applications. A fully relaxed-SiGe buffer layer is required for growing strained-Si for applications towards high performance field effect transistors (FETs) having strained-Si as the channel. Preparation of epitaxial strained-Si layers on relaxed-SiGe (001) heterostructures using low pressure chemical vapor deposition...
Stacked silicon and zirconium dioxide (SiO 2 /ZrO 2 ) films have been deposited on strained-Si 0.91 Ge 0.09 layer at a low temperature using zirconium tetratert butoxide (ZTB) and ZTB/O 2 in a microwave plasma deposition system. Electrical properties of the as-deposited and annealed (in N 2 at 500 o C) samples have...
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