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In this paper, we discuss the potential of realizing future applications with much increased output power capability utilizing the newly developed bi-mode insulated gate transistor (BIGT). The BIGT represents an advanced reverse conducting (RC) IGBT concept implying that the device can operate in both freewheeling diode mode and (IGBT) transistor mode by utilizing the same available silicon volume...
In this paper we present a detailed assessment of modern IGBT and diode behaviour when operating in a hard-switched mode. The paper covers current and future application trends and the associated performance requirements from the latest IGBT and diode designs in terms of device and circuit interaction under different operating conditions. We cover the challenges met by both device and systems designers...
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