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H. Xu, J. Zhang, and co‐workers synthesize anisotropic 2D‐layered rhenium disulfide with high crystal quality and uniform monolayer thickness. As described on page 5019, tellurium‐assisted epitaxial growth on a mica substrate is chosen to generate such structures.
Anisotropic 2D layered material rhenium disulfide (ReS2) with high crystal quality and uniform monolayer thickness is synthesized by using tellurium‐assisted epitaxial growth on mica substrate. Benefit from the lower eutectic temperature of rhenium‐tellurium binary eutectic, ReS2 can grow from rhenium (melting point at 3180 °C) and sulfur precursors in the temperature range of 460–900 °C with high...
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