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We fabricated various kinds of III-V semiconductor nanowires and core-shell nanowires using selective area metalorganic vapor phase epitaxy (SA-MOVPE) on (111) oriented substrates, such as GaAs, GaAs/AlGaAs, InP, InP/InAs/InP on III-V substrates, and InAs and GaAs on Si. As for device applications, we fabricated GaAs/GaAsP core-shell nanowire photo-excited lasers, and InP core-shell pn junction solar...
An electron wave interference device (wash board transistor), consisting of a modulation-doped Al/sub 0.3/Ga/sub 0.7/As/GaAs heterostructure and a 16 nm (AlAs)/sub 0.25/(GaAs)/sub 0.75/ vertical superlattice is fabricated. This transistor shows drain current oscillation due to electron wave interference at 4.2 K at large biasing currents. The (AlAs)/sub 0.25/(GaAs)/sub 0.75/ vertical superlattice...
In AlGaAs grown by MOCVD, carbon incorporation into the AlGaAs layer is discussed. For AlGaAs grown by trimethyl organometallic compounds, trimethyl aluminium and trimethyl gallium, remarkable carbon incorporation of up to about 1018 cm?3 is observed, although the carbon concentration decreases with the increase of the mole fraction ratio of arsine (AsH3) to III group organometallic compounds, [AsH3]/[III]...
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