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The series-resonant converter (SRC) has been used in several application and it recently became popular for smart transformers (STs). In this application, the efficiency and reliability are of paramount importance. Although many papers have addressed the design challenges to improve the converter efficiency, discussions about the reliability are still missing in the literature. In this context, this...
In this work, the quadruple active bridge dc-dc converter (QAB) is proposed to be used as a building block to implement the dc-dc stage of a Smart Transformer. Different configuration for this converter are possible and all of them are considered for investigation. Thus, four different architectures of ST, including one based on the Dual Active Bridge (DAB) converter, are presented and compared in...
Temperature sensitive electrical parameters allow junction temperature measurements on power semiconductors without modification to module packaging. The peak gate current has recently been proposed for IGBT junction temperature measurement and relies on the temperature dependent resistance of the internal gate resistor. In this paper, infra-red measurements are used to evaluate the validity of this...
A new method for junction temperature measurement of MOS-gated power semiconductor switches is presented. The measurement method involves detecting the peak voltage over the external gate resistor of an IGBT or MOSFET during turn-on. This voltage is directly proportional to the peak gate current and fluctuates with temperature due to the temperature-dependent resistance of the internal gate resistance...
A new method for junction temperature measurement of power semiconductor switches is presented. The measurement exploits the temperature dependent resistance of the temperature sensitive electrical parameter (TSEP): the internal gate resistance. This dependence can be observed during the normal switching transitions of an IGBT or MOSFET, and as a result the presented method uses the integral of the...
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