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Long-channel effective mobilities as well as transfer characteristics of a 32 nm single-gate SOI and a 16 nm double-gate (DG) MOSFET have been simulated with live different Monte Carlo (MC) device simulators. The differences are mostly rather small for the SOI-FET with quantum effects having a minor effect on threshold voltage due to the lowly doped channel, while the two multi-subband MC simulators...
We investigate a quantum-correction method for Monte Carlo device simulation. The method consists of reproducing quantum mechanical density-gradient simulation by classical drift-diffusion simulation with modified effective oxide thickness and work function and using these modifications subsequently in Monte Carlo simulation. This approach is found to be highly accurate and can be used fully automatically...
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