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Based on the experimental comparison of a GaN photoconductive semiconductor switch (PCSS) and two GaAs PCSSs, it is proposed that PCSSs made on heavily compensated substrates without the obvious optical frequency-doubling effect possess the laser-energy saturation threshold when triggered with a sub-bandgap laser. To this sort of PCSS, an algorithm is proposed for predicting the laser-energy saturability...
The stagnate on the photoconductive semiconductor switch (PCSS) technology and the development potential are analyzed in the paper. It is pointed out that, if the high-gain mode of a GaAs PCSS can be rapidly quenched to exit the current lock-on state or if the dark leakage current of a GaN or SiC PCSS can be effectively suppressed, the PCSS will be capable to withstand a dc voltage of more than 150...
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