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A broadband multi-octave, 0.1 - 20 GHz, 10 dB ±2 dB amplifier was implemented in the GaN/SiC technology. The amplifier design relies on a series DC/RF HEMTs (SHEMTS) configuration. This configuration offers an alternative to the traveling wave amplifier (TWA), uses a smaller chip area, and readily extends the gain to the low frequency region. The amplifier is power matched at Ku-band and has an output...
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