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This study presents a new vertical MOSFET with recessed gate (RG). Based on the TCAD simulation results, our proposed VMOS structure can gain reduced parasitic capacitance (compared to the conventional VMOS, both Cgd and Cgs can be reduced about 12% and 38.78%, respectively at VDs =1.0 V), improved drain saturation current, and free kink characteristics, in comparison to a conventional VMOS structure...
This study presents a new buried-gate vertical MOSFET (BGVMOS) with suppressed overlap capacitance and improved electrical characteristics due to its modified gate structure. According to the TCAD simulations, our proposed BGVMOS structure can gain reduced parasitic capacitances (27.11% Cgd and 37.53% Cgs at VDs = 1.0 V), improved drain saturation current, and free kink effect, in comparison to a...
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