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An ultimate n-shaped source/drain (π-S/D) metal-oxide semiconductor (MOS) transistor is proposed in this paper. The method used to fabricate the proposed π-S/D transistor is based on both the classical and modern techniques (such as, Si-SiGe epitaxial growth, selective SiGe removal, etc.) that can be controllable and repeatable. Also, a new and simple process without the need of an additional mask...
This paper is to investigate the novel features of a Local Oxidation of silicon multi-tie body polycrystalline silicon thin-film transistor (LOCOS MTB poly-Si TFT) by using numerical simulations. Based on the results, our proposed TFT have improved reliability due to the presence of the LOCOS MTB scheme. Although a multi-body-tied scheme is not compatible in current TFT process, it is believed that...
Backscattering enhancement is a phenomenon in rough surface scattering which manifests itself as a well defined peak in the backscattering direction. In a small roughness regime, backscattering enhancement is induced by the excitation of surface plasmon waves along a certain path followed by their retracing the same path in the reverse direction. In this paper, an accurate solution to two-dimensional...
Radar remote sensing of soil moisture content at low frequencies requires an accurate scattering model of realistic soils, which often involves multilayer rough surfaces and inhomogeneous dielectric profiles. In this paper, a hybrid analytical/numerical solution to two- dimensional scattering from multilayer rough surfaces separated by arbitrary dielectric profiles based on the extended boundary condition...
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