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Extensive and much attention have been injected to Terahertz (THZ) technologies in recent years due to its potential application in remote sensing, biomedical, and space communication. Compare with others, FET based THZ devices have a lot of advantages such as frequency tunable, structure compact and room temperature workable. The work in the ULTRA group explored the field effect transistor-based...
Impacts of random dopant fluctuations (RDFs) on the performance of an optimized double-gate (DG) tunneling FET (TFET) are studied using 3-D device simulations. The sensitivity of the TFET performance with a high-k gate dielectric to RDF is explored in this paper. Sano's approach is used to generate random doping profiles for statistical device simulation. It is found that TFET suffers from dramatic...
This paper presents a model of an inductive link to estimate its power efficiency and voltage gain, which is essential to the design of an inductive link that can transmit the maximum amount of power or optimize a system within the constraints of the application. The proposed model does the prediction using the geometric variables of an inductive link. An inductive power link was implemented, and...
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