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We have improved ELK film so that it is suitable for the processes used in fabricating Cu interconnects without using a dielectric protection layer for CMP, the so called “direct CMP process”. The depth profile of the pore size in the film was successfully controlled to prevent water absorption during the CMP process with a limited k-value increase in the film. The line-to-line dielectric breakdown...
Dual damascene Cu interconnects with Keff below 2.0 have been demonstrated for the first time. Air gaps between Cu lines were formed with a low K SiOC film in a carefully designed manner. CoWP cap layers were introduced to protect the Cu lines and to eliminate a dielectric liner layer. In addition, AGE (Air Gap Exclusion) was applied to solve crucial problems related to the air gaps. Keff of 1.9 was...
Thermoelectric properties of ternary silver thallium tellurides: Ag8T12Te5 and AgT13Te2 were studied above room temperature to slightly below the melting temperature. As for Ag8T12Te5, the effects of Te content on the thermoelectric properties were also studied by characterizing the samples of Ag8T12Tex (x = 5.0, 5.1, 5.2). Both compounds show positive Seebeck coefficient (S). Ag8T12Te5 indicates...
In this paper, we discuss the possibility of stress engineering in the Cu/low-k interconnect reliability. We mention the film characteristics of UV cured SiCN and SiCO. A large stress change from compressive to tensile stress was observed. Through TEG demonstration, it was found that UV-cured SiCN and SiCO film make it possible to reduce SIV failure without degradation to other interconnect reliability
Monte Carlo simulations of the energy distribution of backscattered electrons including cascade secondary electrons have been carried out. This calculation yields the background observed in direct mode by AES. We found that, based on a dielectric model of electron inelastic scattering and secondary excitation, the simulation describes very well the background of the experimentalEN(E) spectra for Si,...
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