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ALD Al2O3 can work as excellent passivation dielectric for both p- and n-type c-Si solar cells. In this paper we have demonstrated that ALD Al2O3 passivation properties are dependent on the reactants. Al2O3 synthesized by thermal ALD with TMA+ O3 is a robust candidate to be integrated into both high-temperature (screen printed) with Seff of 1.4 cm/s and low-temperature with Seff of 0.9 cm/s (such...
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