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We present the responsivity spectra in the 0.2–0.4 THz range at low temperature of a AlGaAs/GaAs field-effect transistor connected to an on-chip integrated antenna. We fabricated asymmetric plasmonic microcavities to obtain down-converted signals from the intrinsic nonlinearity of 2D electron plasma oscillations. Finite-element modeling simulations of the 2D electron oscillations and electromagnetic...
We report on room-temperature plasmonic detection of the thermal emission from a black body in the terahertz and mid-infrared domains by dual-grating-gate InAlAs/InGaAs/InP high electron mobility transistors (HEMTs). In such detectors, the asymmetric grating gate of a large area acts as an effective antenna that improves the performance in the two spectral domains.
Physics of plasma oscillations and basic principles of plasmonic detection of THz radiation in FET structures with 2D electron channels are discussed. Plasmonic devices are practically attractive because they are extremely fast and electrically tunable through the entire THz frequency band by changing electric potentials at metal contacts of the device.
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