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Pinhole defects of titanium nitride (TiN) films prepared by nitrogen ion irradiation during titanium vapor deposition, ion mixing and vapor deposition (IVD) technique, were evaluated potentiodynamically in a deaerated 0.5kmol/m 3 H 2 SO 4 +0.05kmol/m 3 KSCN solution at 298K. The nearly stoichiometric TiN films exhibited the columnar structure with the preferred crystal...
Pinhole defects of TiN films deposited onto stainless steel by a few dry coating processes were evaluated potentiodynamically in a deaerated 0.5kmol/m 3 H 2 SO 4 +0.05kmol/m 3 KSCN solution at 298K. The critical passivation current density i crit in the TiN films prepared by activated reactive evaporation method decreased considerably with increasing...
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