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Baseband injection provides a useful approach for use in linearizing power amplifiers. The challenge is the determination of the required baseband signal. In [6] a generalized formulation quantifying the baseband voltage signal, injected at the output bias port, to linearize the device behavior was introduced. This envelope domain based solution requires the determination of only a small number of...
Baseband injection provides a useful approach for use in linearizing power amplifiers. The challenge is the determination of the required baseband signal. In [6] a generalized formulation quantifying the baseband voltage signal, injected at the output bias port, to linearize the device behavior was introduced. This envelope domain based solution requires the determination of only a small number of...
In [1] a new formulation for quantifying the linearizing baseband voltage signal, injected at the output bias port, to linearize a device behaviour was introduced. A key feature of this approach is that since it is formulated in the envelope domain the number of linearization coefficient required is independent of the envelope shape, complexity. This property is validated by performing baseband linearization...
This paper presents a methodology that provides rapid estimation of the parameters necessary for the high-speed characterization of transistor devices used in modern microwave power amplifiers. The key in achieving this significant measurement speed improvement is the use of a systematic waveform postulation methodology in combination with an active harmonic load-pull measurement system. The methodology...
This paper reports that significant linearity improvement can be obtained in gallium nitride (GaN) RF power amplifiers (RFPAs) in comparison to laterally diffused metal oxide semiconductor (LDMOS) RFPAs through the use of a modulated drain supply. It is shown that the gain characteristic of a GaN RFPA has significant variation with the drain bias voltage and this results in a 10-20 dB reduction in...
This paper presents for the first time an experimental validation of the continuous inverse class-F mode with varying the voltage waveforms, also known as inverse class-FJ. Starting from the standard inverse class-F condition and varying fundamental and third harmonic impedances whilst maintaining an open-circuit second harmonic load it will be demonstrated that output power and drain efficiency can...
Low-frequency, baseband effects in Power Amplifiers can become particularly important when steps are taken to improve operational efficiency through the application of `envelope' based approaches such as Envelope Elimination and Restoration (EER) and Envelope Tracking (ET). The aim of this paper is to demonstrate how a broadband modulated time-domain measurement system, when used in combination with...
This paper presents a rigorous way to quantify the role played by higher baseband impedances in determining baseband electrical memory effects observed in power transistors under two-carrier excitation. These effects typically appear not only as asymmetrical distortion terms in the frequency domain, but also more reliably as a recognizeable hysteresis or looping in the dynamic transfer characteristics...
This paper presents, for the first time the theoretical introduction and experimental validation of the "Continuous Class-F Mode Power Amplifier" that provides for a new design space for the design of high efficiency and broadband power amplifiers. Starting from the standard class-F mode, this work shows that it is possible to maintain constant or even improved output power and efficiency...
Modern induction furnace draws heavy current with considerable distortion in the current waveform. This heavy distorted current causes distortion in the system voltage. Owing to the insulation limitations at 11 KV line, it is very taxing for modern power quality analyzers to capture the exact distorted voltage waveform. However the distorted waveform of current with high amplitude, drawn by induction...
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