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Baseband injection provides a useful approach for use in linearizing power amplifiers. The challenge is the determination of the required baseband signal. In [6] a generalized formulation quantifying the baseband voltage signal, injected at the output bias port, to linearize the device behavior was introduced. This envelope domain based solution requires the determination of only a small number of...
Baseband injection provides a useful approach for use in linearizing power amplifiers. The challenge is the determination of the required baseband signal. In [6] a generalized formulation quantifying the baseband voltage signal, injected at the output bias port, to linearize the device behavior was introduced. This envelope domain based solution requires the determination of only a small number of...
In [1] a new formulation for quantifying the linearizing baseband voltage signal, injected at the output bias port, to linearize a device behaviour was introduced. A key feature of this approach is that since it is formulated in the envelope domain the number of linearization coefficient required is independent of the envelope shape, complexity. This property is validated by performing baseband linearization...
Low-frequency, baseband effects in Power Amplifiers can become particularly important when steps are taken to improve operational efficiency through the application of `envelope' based approaches such as Envelope Elimination and Restoration (EER) and Envelope Tracking (ET). The aim of this paper is to demonstrate how a broadband modulated time-domain measurement system, when used in combination with...
This paper presents a rigorous way to quantify the role played by higher baseband impedances in determining baseband electrical memory effects observed in power transistors under two-carrier excitation. These effects typically appear not only as asymmetrical distortion terms in the frequency domain, but also more reliably as a recognizeable hysteresis or looping in the dynamic transfer characteristics...
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