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This paper reports that significant linearity improvement can be obtained in gallium nitride (GaN) RF power amplifiers (RFPAs) in comparison to laterally diffused metal oxide semiconductor (LDMOS) RFPAs through the use of a modulated drain supply. It is shown that the gain characteristic of a GaN RFPA has significant variation with the drain bias voltage and this results in a 10-20 dB reduction in...
Low-frequency, baseband effects in Power Amplifiers can become particularly important when steps are taken to improve operational efficiency through the application of `envelope' based approaches such as Envelope Elimination and Restoration (EER) and Envelope Tracking (ET). The aim of this paper is to demonstrate how a broadband modulated time-domain measurement system, when used in combination with...
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