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Bamboo‐like gallium nitride (GaN) microwires are synthesized via chemical vapor deposition (CVD) to fabricate piezotronic memristors. Defect boundary areas (DBAs) near the bamboo knots produce apparent switching between high and low resistance states upon sweeping of the magnitudes of the biased voltages across the GaN microwire‐based devices at room temperature. Furthermore, by coupling the piezoelectric...
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