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This manuscript reports the first example of charge‐doping‐induced reactivity enhancement in macroscopic‐sized solid state material. Single layer graphene is supported on a Si wafer that has a 300 nm thick SiO2 layer and is heated photothermally in air to ≈240 °C. Applying both positive and negative pulsed back gate voltages increases the rate of graphene oxidation, as measured by the change of ID...
Defects‐controlled friction in graphene is of technological importance in many applications, but the underlying mechanism remains a subject of debate. Here it is shown that, during the controlled oxidation in oxygen plasma and subsequent reduction induced by high‐energy photons, the contact friction in chemical vapor deposition grown graphene is dominantly determined by the vacancies formed instead...
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